BeGaO2F

semiconductor

· BeGaO2F

BeGaO2F is an experimental oxide-fluoride semiconductor compound combining beryllium, gallium, oxygen, and fluorine. This material belongs to the wider family of wide-bandgap semiconductors and mixed-anion compounds being explored for next-generation optoelectronic and high-frequency applications. Research interest centers on its potential for UV emitters, high-temperature electronics, and radiation-hard devices where the combination of beryllium's low density, gallium's semiconductor properties, and fluorine's electronegativity may offer advantages over conventional GaN or other III-V alternatives.

UV optoelectronics (research phase)High-temperature semiconductorsRadiation-hardened electronicsWide-bandgap device researchExperimental compound development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	—
Magnetic Moment(μB)	1.285e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.040	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeGaO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control