BeGa4Se is a quaternary ceramic compound combining beryllium, gallium, and selenium—a wide-bandgap semiconductor material belonging to the II-IV-VI family of compounds. This material is primarily of research and development interest for optoelectronic and high-temperature semiconductor applications where conventional materials reach performance limits. BeGa4Se is notable for its potential in UV/visible photonic devices and radiation-hardened electronics, though it remains largely experimental compared to more established wide-bandgap semiconductors like GaN or SiC.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 791.9 | ksi | — | ||
Shear Modulus(G) | 565.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1852 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7484 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.4383 | eV/atom | — |