BeEuO3 is an experimental mixed-metal oxide semiconductor combining beryllium and europium with oxygen. This compound belongs to the family of rare-earth-doped oxide semiconductors, currently pursued primarily in research settings for potential optoelectronic and photonic applications rather than established industrial production. The europium dopant introduces luminescent properties characteristic of rare-earth ions, making this material of interest for researchers investigating novel light-emitting devices, scintillators, or quantum optical systems where beryllium's lightweight and thermal properties combine with europium's photonic functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.446 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.554 | eV/atom | — |