BeAsN₃ is an experimental ternary ceramic compound combining beryllium, arsenic, and nitrogen, belonging to the family of advanced nitride ceramics. This material remains primarily in research and development phases, with potential applications in high-temperature structural ceramics and wide-bandgap semiconductor devices, though its toxicity (beryllium and arsenic) and processing complexity limit practical industrial adoption compared to established nitride alternatives like AlN, GaN, and Si₃N₄.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00358 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.280 | eV/atom | — |