BeAs is a beryllium arsenide ceramic compound belonging to the III-V semiconductor family, synthesized primarily for research and specialized applications rather than high-volume industrial production. It is investigated for optoelectronic devices, thermal management materials, and high-frequency semiconductor applications where the combination of beryllium's low density and arsenic's semiconductor properties offers potential advantages. BeAs remains largely experimental; its development is motivated by the need for wide-bandgap semiconductors and materials with exceptional thermal conductivity in extreme environments, though toxicity concerns and manufacturing complexity limit its adoption compared to more mature ceramic and semiconductor alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 69.48 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 32.85 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.808 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.02129 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data