Be4 Ge4 N8

semiconductor

· Be4 Ge4 N8

Be₄Ge₄N₈ is an experimental wide-bandgap semiconductor compound combining beryllium, germanium, and nitrogen in a mixed nitride structure. This material belongs to the emerging class of ternary/quaternary nitride semiconductors designed for high-performance electronic and optoelectronic applications where conventional III-V or II-VI semiconductors face limitations. Research interest in this compound centers on its potential for high-temperature power electronics, UV/deep-UV optoelectronics, and radiation-hard device applications, though it remains primarily in development and is not yet widely deployed in commercial products.

high-temperature power electronics (research)wide-bandgap semiconductorsdeep-UV optoelectronics (developmental)radiation-resistant devicesnext-generation nitride alloys

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	195.0	GPa	—
Shear Modulus(G)	149.0	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.524	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7650	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be4 Ge4 N8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control