Be₂InP is a wide-bandgap semiconductor ceramic compound combining beryllium, indium, and phosphorus. This material belongs to the family of III-V semiconductors and is primarily of research interest rather than established commercial production, investigated for optoelectronic and high-frequency electronic applications where its wide bandgap and thermal properties could offer advantages over more conventional alternatives like GaAs or InP.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1514 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5058 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.3754 | eV/atom | — |