Be₂GaP is a ternary ceramic compound combining beryllium, gallium, and phosphorus, belonging to the class of wide-bandgap semiconductors and advanced ceramics. This material is primarily of research interest for high-frequency optoelectronic and high-temperature applications, where its combination of thermal stability and electronic properties offers potential advantages over conventional III-V semiconductors. Be₂GaP remains largely in the development stage; the beryllium content presents significant manufacturing and handling challenges that have limited widespread industrial adoption compared to more established alternatives like GaP or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1279 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5010 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2855 | eV/atom | — |