Be₂AsSe is a quaternary ceramic compound combining beryllium, arsenic, and selenium—a specialized material from the family of binary and multinary semiconducting ceramics. This compound exists primarily in research and developmental contexts, where it is explored for optoelectronic and photonic applications due to its wide bandgap characteristics and potential for high-frequency or high-temperature device performance. Engineers considering this material should recognize it as an experimental composition rather than an established commercial ceramic; its selection would be driven by specific requirements for radiation hardness, wide-bandgap semiconducting behavior, or niche photonic device geometries where conventional alternatives (GaAs, GaN, or wide-gap oxides) are inadequate.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1634 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.348 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.8725 | eV/atom | — |