Be2 Sn2 As4

semiconductor

· Be2 Sn2 As4

Be₂Sn₂As₄ is a quaternary semiconductor compound combining beryllium, tin, and arsenic in a layered or mixed-valence crystal structure. This is a research-phase material studied for its potential in optoelectronic and thermoelectric applications, belonging to the family of complex semiconductors that can exhibit tunable bandgaps and carrier transport properties depending on crystal phase and doping.

Research optoelectronicsThermoelectric devicesWide-bandgap semiconductorsHigh-temperature electronicsRadiation-hardened devicesExploratory photovoltaics

Compliance & Regulations

?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6732	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2030	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Quality & Standards

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be2 Sn2 As4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control

Quality & Standards