Be₂Sn₂As₄ is a quaternary semiconductor compound combining beryllium, tin, and arsenic in a layered or mixed-valence crystal structure. This is a research-phase material studied for its potential in optoelectronic and thermoelectric applications, belonging to the family of complex semiconductors that can exhibit tunable bandgaps and carrier transport properties depending on crystal phase and doping.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6732 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2030 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data