Be₂Si₂As₄ is a quaternary semiconductor compound combining beryllium, silicon, and arsenic elements in a layered crystal structure. This material belongs to the family of III-V and II-VI semiconductor compounds and is primarily of research interest rather than established commercial production. The compound is investigated for potential optoelectronic and high-frequency applications due to its wide bandgap and thermal stability, though its practical use remains limited compared to more mature semiconductors like GaAs or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.193 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2350 | eV/atom | — |