Beryllium telluride (BeTe) is a II-VI semiconductor compound combining beryllium and tellurium elements. This material is primarily of research and specialized industrial interest, valued for its wide bandgap properties and potential applications in high-energy radiation detection, ultraviolet optoelectronics, and high-temperature semiconductor devices. BeTe remains less common than conventional semiconductors (Si, GaAs) due to beryllium's toxicity concerns and processing challenges, but offers advantages for niche applications requiring wide-gap semiconducting behavior and thermal stability.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,508.9 | ksi | — | ||
Shear Modulus(G) | 6,123.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.202 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4230 | eV/atom | — |