Be1 Te1

semiconductor

· Be1 Te1

Beryllium telluride (BeTe) is a II-VI semiconductor compound combining beryllium and tellurium elements. This material is primarily of research and specialized industrial interest, valued for its wide bandgap properties and potential applications in high-energy radiation detection, ultraviolet optoelectronics, and high-temperature semiconductor devices. BeTe remains less common than conventional semiconductors (Si, GaAs) due to beryllium's toxicity concerns and processing challenges, but offers advantages for niche applications requiring wide-gap semiconducting behavior and thermal stability.

radiation detection systemsultraviolet photodetectorshigh-temperature electronicsresearch optoelectronicsnuclear particle countingspace and defense sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	58.67	GPa	—
Shear Modulus(G)	42.22	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.202	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4230	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be1 Te1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control