Be1 Si1 P2

semiconductor

· Be1 Si1 P2

Be₁Si₁P₂ is an experimental ternary compound combining beryllium, silicon, and phosphorus, belonging to the broader family of wide-bandgap semiconductors and phosphide-based materials. This composition sits at the intersection of beryllium phosphides and silicon phosphides—material systems under active research for high-temperature electronics and optoelectronic applications where thermal stability and radiation hardness are critical. While not yet commercially established, materials in this chemical family are investigated for extreme-environment applications where traditional semiconductors fail, and as potential alternatives in power electronics and space-qualified devices.

wide-bandgap semiconductor researchhigh-temperature electronicsradiation-hardened devicesspace and aerospace qualificationextreme-environment optoelectronicspower semiconductor alternatives

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00560	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6510	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be1 Si1 P2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control