BBiN3 is a boron-bismuth-nitrogen ceramic compound, representing an experimental material in the wide-bandgap semiconductor and refractory ceramic family. Research into ternary nitride ceramics like BBiN3 targets high-temperature structural applications and advanced electronic devices where thermal stability and chemical inertness are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.744 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.820 | eV/atom | — |