BaZnGeSe₄ is a quaternary semiconductor compound combining barium, zinc, germanium, and selenium in a chalcogenide crystal structure. This material is primarily a research compound investigated for infrared (IR) optoelectronic and nonlinear optical applications, particularly as a potential alternative in the mid-to-far IR spectrum where traditional semiconductors show limitations. Its notable advantage over commercial IR materials lies in its wide bandgap and transparency window in the infrared region, making it relevant for specialized photonic and sensing systems where conventional materials like silicon or germanium become opaque.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.460 | eV | — |