BaZn₂As₂ is a ternary semiconductor compound belonging to the I-II-V family of intermetallic semiconductors, combining barium, zinc, and arsenic elements in a defined crystalline structure. This material is primarily of research interest for optoelectronic and thermoelectric applications, as compounds in this class can exhibit direct bandgaps and tunable electronic properties suitable for specialized device development. While not yet established in mainstream industrial production, BaZn₂As₂ represents the broader potential of ternary arsenide semiconductors for next-generation photovoltaics, infrared detectors, and thermoelectric conversion systems where alternatives like GaAs or CdTe may face cost, toxicity, or efficiency constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,568.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 3,726 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2106 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2300 | eV | — | ||
| ↳ | 0.3320 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -6.160 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7226 | eV/atom | — |