BaTaO2N
semiconductor· BaTaO2N
BaTaO₂N is an oxynitride semiconductor compound combining barium, tantalum, oxygen, and nitrogen in a perovskite-related crystal structure. This material is primarily investigated in photocatalysis and energy conversion research, where its narrow bandgap and mixed-anion composition enable visible-light absorption—a key advantage over conventional oxide semiconductors like TiO₂. While not yet deployed in high-volume commercial applications, BaTaO₂N represents the broader class of metal oxynitride photocatalysts that show promise for water splitting, pollutant degradation, and solar energy harvesting under realistic sunlight conditions.
photocatalytic water splittingvisible-light photocatalysissolar hydrogen productionenvironmental remediationresearch-phase semiconductorsenergy conversion devices
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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