BaTaNO2 is an experimental oxide semiconductor compound containing barium, tantalum, nitrogen, and oxygen, representing a rare quaternary nitride oxide in the perovskite or related crystal family. This material is primarily of research interest for next-generation optoelectronic and photocatalytic applications, where mixed-anion semiconductors offer tunable bandgaps and enhanced charge transport compared to conventional binary oxides. While not yet in mainstream industrial production, BaTaNO2 exemplifies the growing class of oxynitride semiconductors being investigated for visible-light photocatalysis, photovoltaics, and potentially hard coating or dielectric applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.780 | eV | — |