BaSnO3 is a perovskite oxide semiconductor composed of barium, tin, and oxygen, belonging to the wider class of complex metal oxides with potential applications in next-generation electronics. This material is primarily of research and development interest rather than established in high-volume production, with its semiconducting properties and thermal stability making it a candidate for transparent conducting oxides, high-temperature electronics, and photocatalytic applications where conventional semiconductors may be limited. Engineers investigating BaSnO3 are typically exploring alternatives to indium tin oxide (ITO) or other transparent conductors for optoelectronic devices, or evaluating it for solid-state electronic applications requiring chemical/thermal robustness beyond standard silicon-based platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 19,429.2 | ksi | — | ||
| ↳ | 20,566.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G)2 entries | 13,014.8 | ksi | — | ||
| ↳ | 13,758.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2509 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 3.100 | eV | — | ||
| ↳ | 0.8830 | eV | — | ||
| ↳ | 2.500 | eV | — | ||
| ↳ | 0.5780 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 22.51 | - | — | ||
| ↳ | 13.76 range 5.020–22.51median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB)2 entries | -0.00000938 | μB | — | ||
| ↳ | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.443 | eV/atom | — | ||
| ↳ | -0.08000 | eV/atom | — | ||
| ↳ | -2.393 | eV/atom | — |