BaSnO2S

semiconductor

· BaSnO2S

BaSnO₂S is an experimental mixed-anion semiconductor compound combining barium, tin, oxygen, and sulfur—a material class being investigated for next-generation optoelectronic and photocatalytic applications. This ternary/quaternary sulfide-oxide hybrid belongs to the broader family of perovskite and perovskite-derivative semiconductors, which are actively studied as alternatives to conventional single-element semiconductors for tailored band gaps and electronic properties. While not yet commercialized at scale, materials in this chemical family show promise for photovoltaics, photocatalysis, and visible-light-driven applications where tuning between oxide and sulfide chemistry offers advantages in band alignment and carrier transport.

photocatalysis researchexperimental photovoltaicsoptoelectronic devicesvisible-light responsive semiconductorsperovskite alternativesmaterials development and screening

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.000	eV	—
Magnetic Moment(μB)	-0.00000443	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaSnO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control