Barium sulfide (BaS) is an inorganic ceramic semiconductor compound belonging to the II-VI semiconductor family, characterized by a rock-salt crystal structure. It is primarily investigated in research and specialized industrial contexts for optoelectronic and photonic applications, particularly in infrared detection systems, scintillation detectors, and phosphor materials where its wide bandgap and optical properties are leveraged. While less commercially prevalent than gallium arsenide or other III-V semiconductors, BaS is notable for its thermal stability and potential in high-temperature or radiation-resistant device environments where traditional semiconductors degrade.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 6,003.1 | ksi | DFT | ||
| ↳ | 6,584.7 | ksi | DFT · OptB88vdW | ||
| ↳ | 6,003.1 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.5561 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.2600 | - | DFT · OptB88vdW | ||
| ↳ | 0.2497 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 3,606.9 | ksi | DFT | ||
| ↳ | 4,159.7 | ksi | DFT · OptB88vdW | ||
| ↳ | 3,606.9 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 1,698.7 | BTU/(hr·ft·°F) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1535 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 1.450 | eV | Measured | ||
| ↳ | 1.460 | eV | Measured | ||
| ↳ | 2.148 | eV | DFT · OptB88vdW | ||
| ↳ | 3.279 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 13.51 | - | DFT · OptB88vdW | ||
| ↳ | 14.95 | - | DFT · PBE | ||
| ↳ | 10.08 range 10.03–10.13median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 5.252 | - | DFT · OptB88vdW | ||
| ↳ | 4.289 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.4300 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.8600 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.000 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.02777 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00237 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00404 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -189.7 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 373.4 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 2.410 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -2.275 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -2.402 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data