BaLa2In2S7
semiconductor· BaLa2In2S7
BaLa2In2S7 is a ternary sulfide semiconductor compound combining barium, lanthanum, and indium elements, belonging to the family of rare-earth-doped sulfide semiconductors. This is primarily a research material explored for its potential in photonic and optoelectronic applications, particularly in mid-infrared light emission and detection where sulfide semiconductors offer advantages over oxide alternatives. The material's composition and structure position it as a candidate for developing next-generation infrared sources, scintillators, or quantum-dot precursors, though it remains largely in the experimental stage without widespread commercial deployment.
infrared optoelectronicsmid-infrared photonicsscintillation detectorsresearch semiconductorsrare-earth phosphorsquantum dot precursors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.