BaInO2F

semiconductor

· BaInO2F

BaInO2F is a mixed-metal oxide fluoride semiconductor compound combining barium, indium, oxygen, and fluorine. This is a research-phase material within the broader family of oxyhalide semiconductors and transparent conducting oxides, currently under investigation for optoelectronic and photonic applications rather than in established industrial production. The fluorine incorporation and multi-cation structure suggest potential for tuning bandgap, improving transparency, or enhancing carrier mobility compared to conventional oxide semiconductors, making it of interest to materials scientists exploring next-generation transparent electronics, photocatalysis, or UV-responsive devices.

research photonicstransparent semiconductorsphotocatalytic materialswide-bandgap semiconductorsoptoelectronic devices (development)UV detection (experimental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.600	eV	—
Magnetic Moment(μB)	6.382e-16	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaInO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control