BaInGa is a ternary ceramic compound composed of barium, indium, and gallium elements, representing an experimental material within the broader family of complex oxide and compound semiconductors. This material is primarily of research interest for optoelectronic and photonic applications, where the combination of these elements may offer tunable bandgap properties or unique crystal structures not readily available in binary compounds. The material remains largely exploratory, with potential applications in high-frequency electronics, photocatalysis, or specialized optical devices, though industrial adoption is limited compared to more established III-V semiconductors and oxide ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.976 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00740 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5378 | eV/atom | — |