BaHfOFN

semiconductor

· BaHfOFN

BaHfOFN is an experimental oxynitride semiconductor compound combining barium, hafnium, oxygen, and nitrogen in a mixed-anion crystal structure. Materials in this chemical family are investigated for wide-bandgap semiconductor applications where hafnium-based compounds offer thermal stability and potential for high-temperature operation; the incorporation of nitrogen (forming an oxynitride) can tune electronic properties and band alignment for photocatalytic or power electronics applications.

Wide-bandgap semiconductor researchHigh-temperature electronicsPhotocatalytic applicationsPower device materials developmentExperimental optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.400	eV	—
Magnetic Moment(μB)	-9.671e-16	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaHfOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control