BaHfO3 (barium hafnium oxide) is a ceramic perovskite compound that functions as a wide-bandgap semiconductor, belonging to the family of hafnate-based oxides used in advanced electronic and thermal applications. The material is primarily investigated in research contexts for high-temperature dielectric devices, nuclear fuel cladding coatings, and thermal barrier systems where chemical stability and refractory properties are critical. BaHfO3 is notable for its potential to replace conventional materials in extreme environments because hafnates exhibit superior thermal stability and radiation resistance compared to more common zirconate or aluminate alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24,395.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 15,768.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2967 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.687 | eV | — | ||
| ↳ | 6.700 | eV | — | ||
| ↳ | 3.683 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 34.37 | - | — | ||
| ↳ | 24.28 range 4.680–43.88median of 2 measurements | - | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | 0.0000577 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01280 | eV/atom | — | ||
Formation Energy(ΔHf)4 entries | -3.625 | eV/atom | — | ||
| ↳ | -0.2600 | eV/atom | — | ||
| ↳ | -3.710 | eV/atom | — | ||
| ↳ | -3.650 | eV/atom | — |