BaGaSn

ceramic

· JVASP-109789· BaGaSn

BaGaSn is an ternary ceramic compound composed of barium, gallium, and tin—a member of the rare-earth and transition metal oxide/intermetallic ceramic family. This material is primarily of research interest for potential applications in electronic ceramics and semiconducting devices, where its unique crystal structure and band gap properties may offer advantages in specific high-temperature or specialized electrical applications. The compound remains largely experimental; engineers would consider it for niche roles in advanced electronics or optoelectronics where conventional semiconductors or oxide ceramics are insufficient.

experimental semiconductor ceramicshigh-temperature electronics researchoptoelectronic device substratessolid-state physics researchemerging photonic materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1993	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.01680	eV/atom	—
Formation Energy(ΔHf)	-0.6053	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaGaSn

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental