BaGaSe is a ternary ceramic compound combining barium, gallium, and selenium in a chalcogenide structure. This material is primarily investigated in research contexts for optoelectronic and semiconductor applications, particularly where infrared transparency and wide bandgap semiconducting behavior are advantageous. It belongs to the family of II-IV-VI semiconducting ceramics, which are explored as alternatives to conventional wide-bandgap semiconductors for specialized photonic and thermal sensing devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,150.1 | ksi | — | ||
Shear Modulus(G) | 580.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.09794 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.386 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.07532 | eV/atom | — |