BaGaSb is a ternary ceramic compound composed of barium, gallium, and antimony, belonging to the family of III-V semiconductor ceramics and intermetallic compounds. This material is primarily of research interest for optoelectronic and photonic applications, where the direct bandgap and crystal structure make it a candidate for light-emitting devices, photodetectors, and high-frequency semiconductor applications. BaGaSb represents an emerging material system with potential advantages in specific wavelength ranges or thermal stability compared to more conventional binary semiconductors, though industrial adoption remains limited and material development is ongoing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1674 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5160 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.3915 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4746 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2704 | eV/atom | — |