BaGaON2

ceramic

· BaGaON2

BaGaON₂ is an experimental ternary ceramic compound containing barium, gallium, and nitrogen, belonging to the family of nitride-based ceramics. This material is primarily of research interest for wide-bandgap semiconductor and optoelectronic applications, where the combination of elements suggests potential for high-temperature stability, chemical inertness, and electronic functionality. While not yet established in high-volume industrial production, nitride ceramics in this compositional space are being investigated for next-generation power electronics, deep-UV emitters, and thermal management systems in extreme environments.

wide-bandgap semiconductorsoptoelectronic deviceshigh-temperature ceramicspower electronics researchUV emittersthermal management

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.000903	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.160	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental