BaGaO2F

semiconductor

· BaGaO2F

BaGaO₂F is an experimental oxyfluoride semiconductor compound combining barium, gallium, oxygen, and fluorine—a composition designed to explore wide-bandgap semiconductor properties for next-generation optoelectronic and high-energy applications. While not yet commercialized, this material belongs to the emerging class of mixed-anion semiconductors that leverage fluorine incorporation to tune electronic structure and thermal stability, offering potential advantages over conventional oxide or nitride semiconductors in ultraviolet emission, high-temperature electronics, or deep-UV detection where conventional gallium-based compounds reach performance limits.

UV photodetectorsDeep-UV light sourcesHigh-temperature semiconductor devicesResearch optoelectronicsWide-bandgap electronicsFunctional ceramic research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.100	eV	—
Magnetic Moment(μB)	-2.481e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaGaO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control