BaGaN3

ceramic

· BaGaN3

BaGaN₃ is an experimental barium gallium nitride ceramic compound belonging to the wide-bandgap semiconductor family. This ternary nitride is primarily a research material under investigation for high-temperature and high-power electronic applications, where its potential wide bandgap and thermal stability could offer advantages over conventional semiconductors in extreme environments. The material represents an emerging class of complex nitride ceramics being explored for next-generation power electronics and potentially optoelectronic devices, though commercial applications remain limited.

High-temperature electronics (research)Wide-bandgap semiconductorsPower device substratesOptoelectronics developmentExtreme environment componentsNext-generation semiconductor research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.992	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.520	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental