BaGaGeH is an experimental ceramic compound combining barium, gallium, germanium, and hydrogen—a rare hydride-based ceramic system primarily studied in materials research rather than established production. This material family is of interest for potential applications in semiconductor physics, photonic devices, and structural ceramics where the incorporation of hydrogen into a metal chalcogenide framework offers unusual property combinations not found in conventional oxides or nitrides. Research into such quaternary hydride ceramics focuses on understanding how hydrogen bonding influences mechanical stiffness, thermal stability, and electronic behavior.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,644.2 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.1900 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 5,443.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1939 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1350 | eV | DFT · OptB88vdW | ||
Dielectric Constant (Relative Permittivity)(εr) | 140.1 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 32.14 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.00333 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.00333 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.5274 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00142 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00200 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -79.57 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 200.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00140 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5551 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data