BaGa4S7
semiconductorBaGa₄S₇ is a barium gallium sulfide compound belonging to the chalcogenide semiconductor family, characterized by a wide bandgap and strong nonlinear optical properties. This is a research-phase material primarily investigated for infrared photonics and frequency conversion applications, where its transparency in the mid-to-far infrared range and second-order nonlinear response offer advantages over more established alternatives like zinc selenide or gallium arsenide. The material remains largely confined to academic and specialized optics development rather than high-volume manufacturing, making it relevant for engineers designing novel infrared optical systems, parametric amplifiers, or laser frequency conversion devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |