BaGa₄S₇ is a barium gallium sulfide compound belonging to the chalcogenide semiconductor family, characterized by a wide bandgap and strong nonlinear optical properties. This is a research-phase material primarily investigated for infrared photonics and frequency conversion applications, where its transparency in the mid-to-far infrared range and second-order nonlinear response offer advantages over more established alternatives like zinc selenide or gallium arsenide. The material remains largely confined to academic and specialized optics development rather than high-volume manufacturing, making it relevant for engineers designing novel infrared optical systems, parametric amplifiers, or laser frequency conversion devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.844 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.540 | eV | — | ||
| ↳ | 2.454 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.64 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5474 | C/m² | — | ||
Seebeck Coefficient(S) | -164.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.067 | eV/atom | — |