BaGa₂Te₄ is a ternary semiconductor ceramic compound combining barium, gallium, and tellurium elements. This material belongs to the family of wide-bandgap semiconductors and is primarily of research and development interest rather than established commercial production. The compound is investigated for potential optoelectronic and photonic applications where its unique crystal structure and electronic properties could enable device functionality in infrared detection, nonlinear optical conversion, or high-energy radiation sensing—areas where conventional semiconductors face performance limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.56 | GPa | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 15.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.270 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6880 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 18.37 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.04673 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7902 | eV/atom | — |