BaGa2SiS6 is a ternary semiconductor compound belonging to the chalcogenide family, combining barium, gallium, silicon, and sulfur in a crystalline structure. This is a research-phase material studied for its potential in infrared optics and nonlinear optical applications, where its wide bandgap and sulfide-based chemistry enable transparency and frequency conversion in wavelength regions where traditional oxides are opaque. Engineers exploring mid-infrared photonics, laser systems, and specialized optical components consider chalcogenide semiconductors like this as alternatives to more established materials when extreme transparency or nonlinear response in the IR spectrum is required.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1288 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.750 | eV | Measured | ||
| ↳ | 2.880 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 6.396 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.146 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data