BaGa₂Se₄ is a ternary semiconductor compound belonging to the chalcogenide family, combining barium, gallium, and selenium in a layered crystal structure. This material is primarily explored in research contexts for nonlinear optical and photonic applications, where its wide bandgap and anisotropic crystal properties make it relevant for frequency conversion, infrared detection, and electro-optic modulation. While not yet widely adopted in high-volume commercial production, BaGa₂Se₄ represents a promising candidate in the broader class of II-IV-VI₂ semiconductors for next-generation optical devices requiring transparency in the infrared region and strong nonlinear response.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.787 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.719 | eV | DFT · OptB88vdW | ||
| ↳ | 3.160 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 6.865 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.3433 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.413 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000601 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00193 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -97.93 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 301.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.109 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data