BaGa₂Se₄ is a ternary semiconductor compound belonging to the chalcogenide family, combining barium, gallium, and selenium in a layered crystal structure. This material is primarily explored in research contexts for nonlinear optical and photonic applications, where its wide bandgap and anisotropic crystal properties make it relevant for frequency conversion, infrared detection, and electro-optic modulation. While not yet widely adopted in high-volume commercial production, BaGa₂Se₄ represents a promising candidate in the broader class of II-IV-VI₂ semiconductors for next-generation optical devices requiring transparency in the infrared region and strong nonlinear response.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.787 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.160 | eV | — | ||
| ↳ | 1.719 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -97.93 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.109 | eV/atom | — |