BaGa₂P₂ is a barium gallium phosphide ceramic compound belonging to the family of III-V semiconductor ceramics and wide-bandgap materials. This is a research-phase material primarily investigated for optoelectronic and high-temperature applications where its crystalline structure and compound composition offer potential advantages over simpler binary ceramics. The material family is of interest to researchers exploring next-generation semiconductors and phosphide-based devices, though commercial deployment remains limited compared to established alternatives like GaP or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.600 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.325 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7374 | eV/atom | — |