BaGa₂GeSe₆ is a quaternary semiconductor compound combining barium, gallium, germanium, and selenium—a member of the chalcogenide family with potential for infrared and nonlinear optical applications. This is primarily a research material rather than a commercial product; it belongs to a class of wide-bandgap semiconductors and mixed-metal chalcogenides being investigated for mid-to-far infrared photonics, where conventional materials like silicon become transparent. Engineers and researchers exploring this compound are interested in its optical nonlinearity, transparency windows, and thermal stability for next-generation infrared optics and sensing systems where conventional semiconductors reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.027 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.810 | eV | — | ||
| ↳ | 1.744 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8530 | eV/atom | — |