BaGa2As2

ceramic

· JVASP-112937· BaGa2As2

BaGa₂As₂ is a ternary ceramic compound belonging to the III-V semiconductor family, combining barium with gallium arsenide constituents. This material is primarily of research interest for optoelectronic and photonic device applications, particularly in the infrared spectrum where its bandgap and crystal structure offer potential advantages over simpler binary semiconductors. Engineers may consider it for specialized high-frequency devices or nonlinear optical applications where the ternary composition provides enhanced performance compared to conventional GaAs, though commercial availability and processing maturity remain limited compared to established semiconductor platforms.

infrared optoelectronicscompound semiconductor researchnonlinear optical deviceshigh-frequency electronicsphotonic integrated circuitsexperimental semiconductor applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1932	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.139	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.7090	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaGa2As2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental