BaGa₂As₂ is a ternary ceramic compound belonging to the III-V semiconductor family, combining barium with gallium arsenide constituents. This material is primarily of research interest for optoelectronic and photonic device applications, particularly in the infrared spectrum where its bandgap and crystal structure offer potential advantages over simpler binary semiconductors. Engineers may consider it for specialized high-frequency devices or nonlinear optical applications where the ternary composition provides enhanced performance compared to conventional GaAs, though commercial availability and processing maturity remain limited compared to established semiconductor platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.348 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.139 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7090 | eV/atom | — |