BaCdTe is a II-VI semiconductor ceramic compound composed of barium, cadmium, and tellurium, belonging to the family of wide-bandgap semiconductors. This material is primarily investigated in research contexts for optoelectronic and radiation detection applications, where its semiconductor properties enable photon detection and energy conversion. BaCdTe is notable within the cadmium telluride family for its potential to combine stability with tunable electronic properties, though it remains less commercially established than other II-VI compounds like CdTe or CdZnTe used in high-volume applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22.17 | GPa | — | ||
Shear Modulus(G) | -500.0 | MPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.836 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.548 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 18.09 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.1558 | C/m² | — | ||
Seebeck Coefficient(S) | -168.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3981 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8768 | eV/atom | — |