Barium arsenide (BaAs) is a binary ceramic compound belonging to the III-V semiconductor family, formed from barium and arsenic elements. It is primarily of research interest for optoelectronic and high-temperature semiconductor applications, where its wide bandgap and thermal stability are potentially valuable. Industrial deployment remains limited, with most development focused on epitaxial thin films and niche high-performance electronics where alternatives like GaAs or InAs face material limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1957 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03350 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9309 | eV/atom | — |