BaAs₃ is a barium arsenide ceramic compound belonging to the III-V semiconductor family, characterized by its cubic crystal structure and moderate density. This material is primarily of research interest rather than established industrial production, with potential applications in optoelectronic and high-temperature semiconductor devices where arsenic-based compounds offer wider bandgaps and thermal stability compared to more common alternatives like GaAs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.331 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -31.46 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6769 | eV/atom | — |