Ba8Sn4S15 is a barium tin sulfide compound belonging to the quaternary sulfide semiconductor family, characterized by a complex crystal structure combining metal cations with sulfide anions. This material is primarily of research interest for thermoelectric and optoelectronic applications, where its band gap and phonon scattering properties make it a candidate for solid-state energy conversion and light-emitting device development; it remains largely experimental rather than commercially established, with potential advantages in non-toxic, earth-abundant alternatives to lead-based or cadmium-containing semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.310 | eV | — |