Ba8Ga10Si36

semiconductor

· Ba8Ga10Si36

Ba8Ga10Si36 is a clathrate semiconductor compound featuring a cage-like crystal structure where barium atoms are enclosed within a framework of gallium and silicon atoms. This material is primarily investigated in thermoelectric research for solid-state heat-to-electricity conversion, where its rattling-cage structure provides unusually low thermal conductivity while maintaining electrical conductivity. Ba8Ga10Si36 represents a promising candidate in the clathrate family for waste-heat recovery and power generation applications where conventional thermoelectrics face limitations.

thermoelectric power generationwaste heat recoveryhigh-temperature energy conversionsemiconductor researchclathrate materials developmentthermal management systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3100	eV	—

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Regulatory Screening

Environmental

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Ba8Ga10Si36

Electrical Properties

Regulatory Screening

Environmental

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